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| Ordering number : EN8635 2SK3745LS 2SK3745LS Features * * * * N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability (Adoption of HVP process). Micaless package facilitating mounting. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID* IDP PD Tch Tstg EAS IAV Tc=25C Conditions Ratings 1500 20 2 4 2.0 35 150 --55 to +150 42 2 Unit V V A A W W C C mJ A *Shows chip capability *1 VDD=99V, L=20mH, IAV=2A *2 L20mH, single pulse Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0V VDS=1200V, VGS=0V VGS= 16V, VDS=0V VDS=10V, ID=1mA VDS=20V, ID=1A ID=1A, VGS=10V Ratings min 1500 100 10 2.5 0.7 1.4 10 13 3.5 typ max Unit V A A V S Marking : K3745 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1505QB MS IM TB-00001890 No.8635-1/4 2SK3745LS Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=200V, VGS=10V, ID=2A VDS=200V, VGS=10V, ID=2A VDS=200V, VGS=10V, ID=2A IS=2A, VGS=0V Ratings min typ 380 70 40 12 37 152 59 37.5 2.7 20 0.88 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V Note) Although the protection diode is contained between gate and source, be careful of handling enough. Package Dimensions unit : mm 7509-002 10.0 3.2 4.5 2.8 3.5 7.2 16.0 16.1 0.9 1.2 0.75 3.6 1.2 14.0 0.7 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 2.55 2.55 Switching Time Test Circuit VIN 10V 0V VIN ID=1A RL=200 VDD=200V 0.6 Avalanche Resistance Test Circuit L 50 RG DUT 10V 0V D PW=10s D.C.0.5% VOUT 50 G VDD 2SK3745LS P.G RGS=50 S No.8635-2/4 2SK3745LS 4.0 3.5 3.0 2.5 ID -- VDS Tc=25C pulse 3.0 ID -- VGS VDS=20V pulse 8V 2.5 Tc= --25C Drain Current, ID -- A Drain Current, ID -- A 10V 2.0 6V 2.0 1.5 1.0 0.5 25C 1.5 75C 1.0 5V VGS=4V 0.5 0 0 5 10 15 20 25 30 35 40 45 50 0 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V 30 IT07118 30 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V IT07119 RDS(on) -- Tc ID=1A Static Drain-to-Source On-State Resistance, RDS(on) -- 25 Static Drain-to-Source On-State Resistance, RDS(on) -- 25 20 20 15 Tc=75C 25C --25C 15 A =1 ID =1 S , VG 0V 10 10 5 5 0 0 2 4 6 8 10 12 14 16 18 20 0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source Voltage, VGS -- V 5 yfs -- ID IT07120 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Case Temperature, Tc -- C IT07121 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S VDS=20V 3 2 25 1.0 7 5 3 2 C C -25 =C Tc 75 Source Current, IS -- A 0.1 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.2 0.4 Tc= 7 5C 25C --25C 0.6 0.8 1.0 1.2 IT07123 Drain Current, ID -- A 5 3 IT07122 5 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=200V VGS=10V 3 2 1000 7 5 3 2 100 7 5 3 Switching Time, SW Time -- ns 2 td(off) Ciss, Coss, Crss -- pF 100 7 5 3 2 Ciss tf Co ss Crss tr td(on) 10 0.1 2 3 5 7 1.0 2 3 2 10 0 5 10 15 20 25 30 35 40 45 50 Drain Current, ID -- A IT09037 Drain-to-Source Voltage, VDS -- V IT09038 No.8635-3/4 2SK3745LS 10 9 VGS -- Qg VDS=200V ID=2A Drain Current, ID -- A 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO IDP=4A <10s Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 10 20 30 40 IT07126 ID=2A 10 10 D s C op 10 er 10 1m m s 0 s s 0m io at s Operation in this area is limited by RDS(on). n 0.01 1.0 Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 Total Gate Charge, Qg -- nC 2.5 PD -- Ta Allowable Power Dissipation, PD -- W Drain-to-Source Voltage, VDS -- V 40 35 30 25 20 15 10 5 0 5 7 1000 2 IT07127 PD -- Tc Allowable Power Dissipation, PD -- W 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT07128 Case Temperature, Tc -- C IT07129 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. PS No.8635-4/4 |
Price & Availability of 2SK3745LS
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